Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFK300N20X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
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Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
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Datasheet
Datasheet Summary
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The IXFK300N20X3 is an N-channel enhancement mode power MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is housed in a TO-264K package and rated for a drain-source voltage of 200 V with a continuous drain current of 160 A. The device has a typical on-resistance of 4 mΩ at 25°C and is avalanche rated with an energy rating of 3.5 J. It features low gate charge (375 nC), low package inductance, and a maximum junction temperature of 150°C. The thermal resistance from junction to case is 0.10 °C/W. The part meets international standard package specifications and is designed for high power density and space savings.

Datasheet Summary
Powered by GS/AI

The IXFK300N20X3 is an N-channel enhancement mode power MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is housed in a TO-264K package and rated for a drain-source voltage of 200 V with a continuous drain current of 160 A. The device has a typical on-resistance of 4 mΩ at 25°C and is avalanche rated with an energy rating of 3.5 J. It features low gate charge (375 nC), low package inductance, and a maximum junction temperature of 150°C. The thermal resistance from junction to case is 0.10 °C/W. The part meets international standard package specifications and is designed for high power density and space savings.

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFK300N20X3 - Littelfuse, Inc.
Rosemont, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFK300N20X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFK300N20X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFK300N20X3
MOSFET Transistor 278-IXFK300N20X3
Power Field-Effect Transistor, Product overview: IXFK300N20X3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK300N20X3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFK300N20X3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK300N20X3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK300N20X3 278-IXFK300N20X3
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options MOSFET Transistor
Polarity N-Channel
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