The IXFX250N10P is an N-channel enhancement mode power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, uninterruptible power supplies, and AC motor drives. It is packaged in the PLUS247 case, weighs 6 grams, and has a drain-source breakdown voltage of 100 V, continuous drain current of 250 A at 25°C, and a maximum drain-source on-resistance of 6.5 mΩ at 10 V gate bias. The device is avalanche rated, features a fast intrinsic diode with reverse recovery time of 200 ns, and offers low gate charge and package inductance. It supports a maximum junction temperature of 175°C and a steady-state power dissipation of 1250 W at 25°C case temperature.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFX250N10P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
