Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFP16N60P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Datasheet
Datasheet Summary
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The IXFP16N60P3 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-220 case with a drain tab, weighing 3.0 g. The device has a drain-source breakdown voltage of 600 V, a continuous drain current of 16 A at 25 °C, and a maximum pulsed drain current of 40 A. Its on-state resistance is 470 mΩ at a gate-source voltage of 10 V and a drain current of 8 A. The MOSFET is avalanche rated with an energy rating of 800 mJ and features a fast intrinsic rectifier with a forward voltage of 1.4 V. Thermal resistance from junction to case is 0.50 °C/W. It meets RoHS standards and is designed for operation from -55 °C to 150 °C junction temperature.

Datasheet Summary
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The IXFP16N60P3 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-220 case with a drain tab, weighing 3.0 g. The device has a drain-source breakdown voltage of 600 V, a continuous drain current of 16 A at 25 °C, and a maximum pulsed drain current of 40 A. Its on-state resistance is 470 mΩ at a gate-source voltage of 10 V and a drain current of 8 A. The MOSFET is avalanche rated with an energy rating of 800 mJ and features a fast intrinsic rectifier with a forward voltage of 1.4 V. Thermal resistance from junction to case is 0.50 °C/W. It meets RoHS standards and is designed for operation from -55 °C to 150 °C junction temperature.

Suppliers

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Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFP16N60P3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFP16N60P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFP16N60P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFP16N60P3
MOSFET Transistor 278-IXFP16N60P3
Power Field-Effect Transistor, Product overview: IXFP16N60P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFP16N60P3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFP16N60P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFP16N60P3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFP16N60P3 278-IXFP16N60P3
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFET Transistor
Polarity N-Channel
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