The IXFN300N10P is an N-channel enhancement mode power MOSFET for high-power switching applications such as DC-DC converters and motor drives. It is packaged in a miniBLOC case with aluminum nitride isolation and weighs 30 g. The device has a 100 V drain-source voltage rating and a continuous drain current of 295 A at 25°C. Its maximum on-resistance is 5.5 mΩ at 10 V gate voltage and 50 A drain current. It is avalanche rated with a 3 J energy rating and features a fast intrinsic diode with 200 ns reverse recovery time and 1.3 V forward voltage at 100 A. Thermal resistance from junction to case is 0.14 °C/W. Junction temperature ranges from -55°C to 175°C. The part meets AEC-Q200 and RoHS standards.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFN300N10P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
