Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXFT80N65X2HV

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Datasheet
Datasheet Summary
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The IXFT80N65X2HV is an N-channel enhancement mode MOSFET for high-power switching applications, packaged in a TO-268HV case with a drain tab. It has a 650 V drain-source voltage rating and an 80 A continuous drain current at 25°C. Its on-state resistance is 38 mΩ at 10 V gate-source voltage, and it is avalanche rated with a 3 J energy rating. The intrinsic body diode has a 1.4 V forward voltage and a 200 ns reverse recovery time. The thermal resistance from junction to case is 0.14 °C/W, and the maximum junction temperature is 150°C. The gate threshold voltage ranges from 3.5 V to 5.0 V. It meets AEC-Q200 qualification standards and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

The IXFT80N65X2HV is an N-channel enhancement mode MOSFET for high-power switching applications, packaged in a TO-268HV case with a drain tab. It has a 650 V drain-source voltage rating and an 80 A continuous drain current at 25°C. Its on-state resistance is 38 mΩ at 10 V gate-source voltage, and it is avalanche rated with a 3 J energy rating. The intrinsic body diode has a 1.4 V forward voltage and a 200 ns reverse recovery time. The thermal resistance from junction to case is 0.14 °C/W, and the maximum junction temperature is 150°C. The gate threshold voltage ranges from 3.5 V to 5.0 V. It meets AEC-Q200 qualification standards and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
24 V Bidirectional 250 W Discrete TVS Diode - IXFT80N65X2HV - Littelfuse, Inc.
Rosemont, IL, United States
24 V Bidirectional 250 W Discrete TVS Diode
IXFT80N65X2HV
24 V Bidirectional 250 W Discrete TVS Diode IXFT80N65X2HV
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFT80N65X2HV
MOSFET Transistor 278-IXFT80N65X2HV
Power Field-Effect Transistor, Product overview: IXFT80N65X2HV from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFT80N65X2HV can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFT80N65X2HV from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFT80N65X2HV can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFT80N65X2HV 278-IXFT80N65X2HV
Product Name 24 V Bidirectional 250 W Discrete TVS Diode MOSFET Transistor
Polarity N-Channel
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