Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFP10N80P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFP10N80P is an N-channel enhancement mode MOSFET designed for switched-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-220 case with a weight of 3.0 g and features an avalanche-rated, fast intrinsic diode. The device has a drain-source voltage rating of 800 V, a continuous drain current of 10 A at 25°C, and a maximum power dissipation of 300 W. Its typical on-resistance is 1.1 Ω at 10 V gate voltage and 5 A drain current, and it has a thermal resistance from junction to case of 0.50 °C/W. The MOSFET is rated for operating junction temperatures from -55°C to 150°C and meets international standard package requirements. It is avalanche rated and designed for easy driving and protection.

Datasheet Summary
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The IXFP10N80P is an N-channel enhancement mode MOSFET designed for switched-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-220 case with a weight of 3.0 g and features an avalanche-rated, fast intrinsic diode. The device has a drain-source voltage rating of 800 V, a continuous drain current of 10 A at 25°C, and a maximum power dissipation of 300 W. Its typical on-resistance is 1.1 Ω at 10 V gate voltage and 5 A drain current, and it has a thermal resistance from junction to case of 0.50 °C/W. The MOSFET is rated for operating junction temperatures from -55°C to 150°C and meets international standard package requirements. It is avalanche rated and designed for easy driving and protection.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFP10N80P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFP10N80P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFP10N80P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 10A 800V 1.1ohm MOSFET Transistor
278-IXFP10N80P
N-Channel 10A 800V 1.1ohm MOSFET Transistor 278-IXFP10N80P
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 Product overview: IXFP10N80P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10A, 800V, 1.1ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10A, 800V, 1.1ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFP10N80P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 Product overview: IXFP10N80P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10A, 800V, 1.1ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10A, 800V, 1.1ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFP10N80P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFP10N80P 278-IXFP10N80P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 10A 800V 1.1ohm MOSFET Transistor
Polarity N-Channel
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