- Trained on our vast library of engineering resources.

Littelfuse, Inc. 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK90N20Q

Description
The Q-Class series devices are popular Power MOSFETs (HiPerFETâ„¢) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK90N20Q - Littelfuse, Inc.
Chicago, IL, United States
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFK90N20Q
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK90N20Q
The Q-Class series devices are popular Power MOSFETs (HiPerFETâ„¢) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK90N20Q
Product Name 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
Polarity N-Channel
V(BR)DSS 200 volts
IDSS 90000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK170N10P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 100 volts
IDSS 170000 milliamps
View Details
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH9N80 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 800 volts
IDSS 9000 milliamps
View Details
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFK220N20X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 200 volts
IDSS 220000 milliamps
View Details
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFA14N60P3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 14000 milliamps
View Details