Littelfuse, Inc. 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK90N20Q

Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
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Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
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Datasheet
Datasheet Summary
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The IXFK90N20Q is an N-channel enhancement mode Power MOSFET designed for switched-mode power supplies, DC-DC converters, and AC motor control, featuring an avalanche-rated structure for unclamped inductive load switching. It is packaged in a TO-264 AA case, measuring 26.16 mm in length and 19.96 mm in width, with a mounting torque rating of 0.4/6 Nm/lb.in. The device has a drain-source breakdown voltage of 200 V, continuous drain current of 90 A at 25°C, and a maximum pulsed drain current of 360 A. Its on-resistance is 22 mΩ at 10 V gate-source voltage, with a gate charge of 40 nC. The thermal resistance junction-to-case is 0.26 K/W, and the operating junction temperature ranges from -55°C to 150°C. The packaging meets UL94V-0 flammability classification and supports clip or spring mounting via the PLUS247TM configuration.

Datasheet Summary
Powered by GS/AI

The IXFK90N20Q is an N-channel enhancement mode Power MOSFET designed for switched-mode power supplies, DC-DC converters, and AC motor control, featuring an avalanche-rated structure for unclamped inductive load switching. It is packaged in a TO-264 AA case, measuring 26.16 mm in length and 19.96 mm in width, with a mounting torque rating of 0.4/6 Nm/lb.in. The device has a drain-source breakdown voltage of 200 V, continuous drain current of 90 A at 25°C, and a maximum pulsed drain current of 360 A. Its on-resistance is 22 mΩ at 10 V gate-source voltage, with a gate charge of 40 nC. The thermal resistance junction-to-case is 0.26 K/W, and the operating junction temperature ranges from -55°C to 150°C. The packaging meets UL94V-0 flammability classification and supports clip or spring mounting via the PLUS247TM configuration.

Suppliers

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Description
Supplier Links
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK90N20Q - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFK90N20Q
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK90N20Q
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 90A 200V 0.022ohm MOSFET Transistor
278-IXFK90N20Q
N-Channel 90A 200V 0.022ohm MOSFET Transistor 278-IXFK90N20Q
Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 Product overview: IXFK90N20Q from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 90A, 200V, 0.022ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 90A, 200V, 0.022ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK90N20Q can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 Product overview: IXFK90N20Q from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 90A, 200V, 0.022ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 90A, 200V, 0.022ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK90N20Q can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK90N20Q 278-IXFK90N20Q
Product Name 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 90A 200V 0.022ohm MOSFET Transistor
Polarity N-Channel
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