Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q2-Class - IXFK66N50Q2 IXFK66N50Q2

Description
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance
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Description
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance
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Datasheet
Datasheet Summary
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The IXFK66N50Q2 is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring a 500 V drain-source breakdown voltage and a continuous drain current of 66 A at 25°C. Housed in a TO-264 package, it measures 26.16 mm in length and weighs 10 g. The device has a maximum on-state resistance of 80 mΩ at 10 V gate voltage and a total gate charge of 98 nC. It is avalanche-rated with an energy rating of 4 J and supports a peak pulse current of 264 A. The case thermal resistance is 0.15 °C/W, and the junction temperature ranges from -55°C to 150°C. The plastic body meets UL 94 V-0 flammability classification.

Datasheet Summary
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The IXFK66N50Q2 is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring a 500 V drain-source breakdown voltage and a continuous drain current of 66 A at 25°C. Housed in a TO-264 package, it measures 26.16 mm in length and weighs 10 g. The device has a maximum on-state resistance of 80 mΩ at 10 V gate voltage and a total gate charge of 98 nC. It is avalanche-rated with an energy rating of 4 J and supports a peak pulse current of 264 A. The case thermal resistance is 0.15 °C/W, and the junction temperature ranges from -55°C to 150°C. The plastic body meets UL 94 V-0 flammability classification.

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Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q2-Class - IXFK66N50Q2 - IXFK66N50Q2 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q2-Class - IXFK66N50Q2
IXFK66N50Q2
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q2-Class - IXFK66N50Q2 IXFK66N50Q2
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance

Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance

Supplier's Site Datasheet
Singapore, Singapore
500V 66A MOSFET Transistor
278-IXFK66N50Q2
500V 66A MOSFET Transistor 278-IXFK66N50Q2
Trans MOSFET N-CH 500V 66A 3-Pin(3+Tab) TO-264AA Product overview: IXFK66N50Q2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 66A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 66A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK66N50Q2 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 500V 66A 3-Pin(3+Tab) TO-264AA Product overview: IXFK66N50Q2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 66A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 66A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK66N50Q2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK66N50Q2 278-IXFK66N50Q2
Product Name Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q2-Class - IXFK66N50Q2 500V 66A MOSFET Transistor
Polarity N-Channel
Package Type TO-264
MOSFET Operating Mode Enhancement
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