Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs. Features: International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies Pulse generation Laser drivers Advantages: Easy to mount High power density Space savings
Littelfuse, Inc. | |
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Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
Product Number | IXFL80N50Q2 |
Product Name | 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
Polarity | N-Channel |
V(BR)DSS | 500 volts |
IDSS | 55000 milliamps |