The IXFM50N20 is an N-channel enhancement mode Power MOSFET designed for DC-DC converters, synchronous rectification, battery chargers, switched-mode power supplies, and AC motor control. It is packaged in the TO-204 AE (TO-3) case, measuring 39.12 mm in length and 22.22 mm in width, with a mounting torque of 1.13 Nm. It has a drain-source breakdown voltage of 200 V, a continuous drain current of 50 A at 25°C, and a pulsed drain current of 200 A. The on-resistance is 45 mΩ at 10 V gate voltage. It features a fast intrinsic rectifier, low gate charge, low package inductance, and is rated for junction temperatures from -55°C to 150°C. It is compliant with AEC-Q200 and meets RoHS standards.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFM50N20 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Standard - IXFM50N20 |
| Polarity | N-Channel |
