N-Channel 650V 43.3A (Tc) 391W (Tc) Through Hole PG-TO247-3
Manufacturer: Infineon Technologies
Win Source Part Number: 776939-IPW65R080CFDA
Series: Automotive, AEC-Q101, CoolMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -40°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
Family Name: IPW65R080CFDA
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TO247-3
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 4.5V @ 1.76mA
Gate Charge (Qg) (Maximum) @ Vgs: 161nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4440pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 391W (Tc)
Rds On (Maximum) @ Id, Vgs: 80 mOhm @ 17.6A, 10V
Alternative Parts (Cross-Reference): SiHG47N65E-GE3; SiHW47N65E-GE3; STW54NM65ND; SiHG33N65E-GE3;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFET N-CH 650V 43.3A TO247-3 Product overview: IPW65R080CFDAFKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 43.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 43.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW65R080CFDAFKS
MOSFET N-Ch 650V 43.3A TO247-3
MOSFET N-CH 650V 43.3A TO247-3
MOSFET N-CH 650V 43.3A TO247-3
MOSFET, N-CH, AEC-Q101, 650V, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:43.3A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPW65R080CFDAFKSA1-ND | 776939-IPW65R080CFDAFKSA1 | 278-IPW65R080CFDAFKSA1 | IPW65R080CFDAFKSA1 | IPW65R080CFDAFKSA1 | IPW65R080CFDAFKSA1 | 13AC9099 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R080CFDAFKSA1 | 650V 43.3A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | Tube | 10V | TO-247; TO-247-3 | TO-3; TO-247 | |
| Transistor Grade / Operating Range | Automotive | ||||||
| PD | 391000 milliwatts | 391 milliwatts | 391000 milliwatts | ||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
