Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW65R115CFD7A IPW65R115CFD7A

Description
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 115mOhm IPW65R115CFD7A in TO-247 package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Summary of Features AEC-Q101 qualified Battery voltages up to 475V without compromising on reliability standards Efficiency improvements in hard- and soft-switching topologies up to 98.4% Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA Benefits Highest reliability in the field meeting automotive lifetime requirements Enabling of higher power density designs Scalable as designed for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers Hard-switching topologies (with SiC diode) PFC boost-stages DC-DC stage of on-board chargers HV-LV DC-DC converters LLC or full-bridge phase shift (ZVS) Auxiliary power supplies Applications On-board charging (OBC) for electric vehicles Designers who used this product also designed with IPP026N10NF2S | N-Channel Power MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPP026N10NF2S | N-Channel Power MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPP026N10NF2S | N-Channel Power MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete
  • Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW65R115CFD7A - IPW65R115CFD7A - Infineon Technologies AG
    Infineon Technologies AG
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Description
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 115mOhm IPW65R115CFD7A in TO-247 package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Summary of Features AEC-Q101 qualified Battery voltages up to 475V without compromising on reliability standards Efficiency improvements in hard- and soft-switching topologies up to 98.4% Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA Benefits Highest reliability in the field meeting automotive lifetime requirements Enabling of higher power density designs Scalable as designed for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers Hard-switching topologies (with SiC diode) PFC boost-stages DC-DC stage of on-board chargers HV-LV DC-DC converters LLC or full-bridge phase shift (ZVS) Auxiliary power supplies Applications On-board charging (OBC) for electric vehicles Designers who used this product also designed with IPP026N10NF2S | N-Channel Power MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPP026N10NF2S | N-Channel Power MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPP026N10NF2S | N-Channel Power MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete
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Datasheet
Datasheet Summary
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The IPW65R115CFD7A is a 650V automotive-qualified N-channel MOSFET with an integrated fast body diode, designed for PFC and resonant switching topologies such as LLC and ZVS phase-shift full-bridge converters. It is packaged in a PG-TO247-3 case with dimensions of 20.70-21.50 mm in length, 15.50-16.30 mm in width, and 4.70-5.30 mm in height. The device has a maximum on-state resistance of 115 mΩ at 25°C, a pulsed drain current rating of 82 A, and a maximum junction temperature of 150°C. It is qualified to AEC-Q101 and features ultra-low reverse recovery charge (Qrr) of 0.56 µC and a reverse diode commutation speed of 1300 A/µs. The thermal resistance from junction to case is 1.10 °C/W.

Datasheet Summary
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The IPW65R115CFD7A is a 650V automotive-qualified N-channel MOSFET with an integrated fast body diode, designed for PFC and resonant switching topologies such as LLC and ZVS phase-shift full-bridge converters. It is packaged in a PG-TO247-3 case with dimensions of 20.70-21.50 mm in length, 15.50-16.30 mm in width, and 4.70-5.30 mm in height. The device has a maximum on-state resistance of 115 mΩ at 25°C, a pulsed drain current rating of 82 A, and a maximum junction temperature of 150°C. It is qualified to AEC-Q101 and features ultra-low reverse recovery charge (Qrr) of 0.56 µC and a reverse diode commutation speed of 1300 A/µs. The thermal resistance from junction to case is 1.10 °C/W.

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Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW65R115CFD7A - IPW65R115CFD7A - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW65R115CFD7A
IPW65R115CFD7A
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW65R115CFD7A IPW65R115CFD7A
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 115mOhm IPW65R115CFD7A in TO-247 package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. Summary of Features AEC-Q101 qualified Battery voltages up to 475V without compromising on reliability standards Efficiency improvements in hard- and soft-switching topologies up to 98.4% Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA Benefits Highest reliability in the field meeting automotive lifetime requirements Enabling of higher power density designs Scalable as designed for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers Hard-switching topologies (with SiC diode) PFC boost-stages DC-DC stage of on-board chargers HV-LV DC-DC converters LLC or full-bridge phase shift (ZVS) Auxiliary power supplies Applications On-board charging (OBC) for electric vehicles Designers who used this product also designed with IPP026N10NF2S | N-Channel Power MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPP026N10NF2S | N-Channel Power MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPP026N10NF2S | N-Channel Power MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete

650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A

The 115mOhm IPW65R115CFD7A in TO-247 package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility.


Summary of Features

  • AEC-Q101 qualified
  • Battery voltages up to 475V without compromising on reliability standards
  • Efficiency improvements in hard- and soft-switching topologies up to 98.4%
  • Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA

Benefits

  • Highest reliability in the field meeting automotive lifetime requirements
  • Enabling of higher power density designs
  • Scalable as designed for use in PFC and DC-DC stage
  • Granular portfolio available

Potential Applications

  • On-board chargers
    • Hard-switching topologies (with SiC diode)
    • PFC boost-stages
    • DC-DC stage of on-board chargers
  • HV-LV DC-DC converters
    • LLC or full-bridge phase shift (ZVS)
  • Auxiliary power supplies

Applications

  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • IPP026N10NF2S |
    N-Channel Power MOSFET
  • IPD50N06S4L-12 |
    Automotive MOSFET
  • AIKW50N65RF5 |
    CoolSiC™ hybrid discrete
  • IPP026N10NF2S |
    N-Channel Power MOSFET
  • IPD50N06S4L-12 |
    Automotive MOSFET
  • AIKW50N65RF5 |
    CoolSiC™ hybrid discrete
  • IPP026N10NF2S |
    N-Channel Power MOSFET
  • IPD50N06S4L-12 |
    Automotive MOSFET
  • AIKW50N65RF5 |
    CoolSiC™ hybrid discrete
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPW65R115CFD7A
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IPW65R115CFD7A
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 3.5 to 4.5 volts
rDS(on) 0.1150 ohms
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