Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R280E6 IPW65R280E6

Manufacturer: Infineon Technologies
Win Source Part Number: 1046116-IPW65R280E6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 13.8A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 440μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 950pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 4.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 650V 13.8A TO247 Product overview: IPW65R280E6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 13.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 13.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPW65R280E6 can be used for catalog matching and distributor lookup.