Infineon Technologies AG 650V 17.5A MOSFET Transistor IPW65R190CFDAFKSA1

MOSFET N-CH 650V 17.5A TO247-3 Product overview: IPW65R190CFDAFKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 17.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 17.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW65R190CFDAFKSA1 can be used for catalog matching and distributor lookup.

N-Channel 650V 17.5A (Tc) 151W (Tc) Through Hole PG-TO247-3

Win Source Part Number: 1220704-IPW65R190CFDAFKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, CoolMOS™
Package: Tube
Standard Package: 240
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Power Dissipation (Max): 151W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPW65R190CFDA;
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: INFINFIPW65R190CFDAFKSA1,2156-IPW65R190CFDAFKSA1,SP000928268
Base Product Number: IPW65R
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V