Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPW65R310CFDFKSA1

Win Source Part Number: 1199675-IPW65R310CFDFKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tube
Standard Package: 240
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Power Dissipation (Max): 104.2W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPW65R310CFD;
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPW65R310CFD,SP000890688,INFINFIPW65R310CFDFKSA1,IPW65R310CFD-ND,2156-IPW65R310CFDFKSA1-IT
Base Product Number: IPW65R
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

N-Channel 650V 11.4A (Tc) 104.2W (Tc) Through Hole PG-TO247-3-1