Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPW65R150CFDAFKSA1

Description
Win Source Part Number: 1065388-IPW65R150CFD AFKSA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, CoolMOS™ Package: Tube Standard Package: 240 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Power Dissipation (Max): 195.3W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW34N65M5; IPW65R190CFDAFKSA1; STW33N60M2; FCH25N60N; STW30N65M5; IPW65R125C7XKSA1IPW6 5R150CFDA; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000928274,2156-IPW 65R150CFDAFKSA1,ROCI NFIPW65R150CFDAFKSA1 Base Product Number: IPW65R150 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1065388-IPW65R150CFDAFKSA1 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPW65R150CFDAFKSA1-ND - DigiKey
    DigiKey
  • MOSFET N-CH 650V TO247 - 376-IPW65R150CFDAFKSA1 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPW65R150CFDAFKSA1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1065388-IPW65R150CFD AFKSA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, CoolMOS™ Package: Tube Standard Package: 240 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Power Dissipation (Max): 195.3W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW34N65M5; IPW65R190CFDAFKSA1; STW33N60M2; FCH25N60N; STW30N65M5; IPW65R125C7XKSA1IPW6 5R150CFDA; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000928274,2156-IPW 65R150CFDAFKSA1,ROCI NFIPW65R150CFDAFKSA1 Base Product Number: IPW65R150 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1065388-IPW65R150CFDAFKSA1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1065388-IPW65R150CFDAFKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1065388-IPW65R150CFDAFKSA1
Win Source Part Number: 1065388-IPW65R150CFD AFKSA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, CoolMOS™ Package: Tube Standard Package: 240 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Power Dissipation (Max): 195.3W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW34N65M5; IPW65R190CFDAFKSA1; STW33N60M2; FCH25N60N; STW30N65M5; IPW65R125C7XKSA1IPW6 5R150CFDA; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000928274,2156-IPW 65R150CFDAFKSA1,ROCI NFIPW65R150CFDAFKSA1 Base Product Number: IPW65R150 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1065388-IPW65R150CFDAFKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, CoolMOS™
Package: Tube
Standard Package: 240
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Power Dissipation (Max): 195.3W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STW34N65M5; IPW65R190CFDAFKSA1; STW33N60M2; FCH25N60N; STW30N65M5; IPW65R125C7XKSA1IPW65R150CFDA;
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000928274,2156-IPW65R150CFDAFKSA1,ROCINFIPW65R150CFDAFKSA1
Base Product Number: IPW65R150
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
650V 22.4A MOSFET Transistor
278-IPW65R150CFDAFKSA1
650V 22.4A MOSFET Transistor 278-IPW65R150CFDAFKSA1
MOSFET N-CH 650V 22.4A TO247-3 Product overview: IPW65R150CFDAFKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 22.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 22.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW65R150CFDAFKS A1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 22.4A TO247-3 Product overview: IPW65R150CFDAFKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 22.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 22.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW65R150CFDAFKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPW65R150CFDAFKSA1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPW65R150CFDAFKSA1-ND
Single FETs, MOSFETs IPW65R150CFDAFKSA1-ND
N-Channel 650V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO247-3

N-Channel 650V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO247-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPW65R150CFDAFKSA1
MOSFET IPW65R150CFDAFKSA1
MOSFET N-Ch 650V 22.4A TO247-3

MOSFET N-Ch 650V 22.4A TO247-3

Buy Now Datasheet
MOSFET N-CH 650V TO247 - 376-IPW65R150CFDAFKSA1 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 650V TO247
376-IPW65R150CFDAFKSA1
MOSFET N-CH 650V TO247 376-IPW65R150CFDAFKSA1
MOSFET N-CH 650V TO247

MOSFET N-CH 650V TO247

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPW65R150CFDAFKSA1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPW65R150CFDAFKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPW65R150CFDAFKSA1
MOSFET N-CH 650V 22.4A TO247-3

MOSFET N-CH 650V 22.4A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1065388-IPW65R150CFDAFKSA1 278-IPW65R150CFDAFKSA1 IPW65R150CFDAFKSA1-ND IPW65R150CFDAFKSA1 376-IPW65R150CFDAFKSA1 IPW65R150CFDAFKSA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 650V 22.4A MOSFET Transistor Single FETs, MOSFETs MOSFET MOSFET N-CH 650V TO247 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
PD 195300 milliwatts 195 milliwatts 195300 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type SOT3 Tube TO-247; TO-247-3 TO-247; TO-247-3
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
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