N-Channel 650V 33A (Tc) 171W (Tc) Through Hole PG-TO247-4
Manufacturer: Infineon Technologies
Win Source Part Number: 874906-IPZ65R065C7XK
Series: CoolMOS™ C7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 33A (Tc) 171W (Tc) Through Hole PG-TO247-4
Package: TO-247-4
Package: Tube
Mounting: Through Hole
Family Name: IPZ65R065
Categories: Discrete Semiconductor Products
Case / Package: PG-TO247-4
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Quantity per package: 30
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 2156-IPZ65R065C7XKSA
MOSFET N-CH 650V 33A TO247-4 Product overview: IPZ65R065C7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPZ65R065C7XKSA1
MOSFET, N-CH, 650V, 33A, 171W, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 33A TO247-4
| DigiKey | Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPZ65R065C7XKSA1-ND | 874906-IPZ65R065C7XKSA1 | 2224728 | 278-IPZ65R065C7XKSA1 | IPZ65R065C7XKSA1 | 84AC6851 | IPZ65R065C7XKSA1 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPZ65R065C7XKSA1 | MOSFETs | 650V 33A MOSFET Transistor | MOSFET | Mosfet, N-Ch, 650V, 33A, 171W, To-247; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-247; TO-247-4 | SOT3; PG-TO247-4 | TO-247; TO-247 | Tube | TO-3; TO-247 | Through Hole | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 650 volts |
