MOSFET N-CH 650V 31.2A TO247-3 Product overview: IPW65R110CFDFKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 31.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 31.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW65R110CFDFKSA
N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3-1
MOSFET N-CH 650V 31.2A TO247-3
Win Source Part Number: 982743-IPW65R110CFDF
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Power Dissipation (Max): 277.8W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPW65R110CFD-ND,IPW6
Base Product Number: IPW65R110
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
MOSFET N-CH 650V 31.2A TO247-3
MOSFET Transistor, N Channel, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPW65R110CFDFKSA1 | 448-IPW65R110CFDFKSA1-ND | IPW65R110CFDFKSA1 | 982743-IPW65R110CFDFKSA1 | IPW65R110CFDFKSA1 | IPW65R110CFDFKSA1 | 85X6043 |
| Product Name | 650V 31.2A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 31.2 A, 700 V, 0.099 Ohm, 10 V, 4 V Rohs Compliant Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 650 volts | 650 volts | |||||
| PD | 278 milliwatts | 277800 milliwatts | 277800 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
