Infineon Technologies AG Single FETs, MOSFETs IPW65R110CFDFKSA1

MOSFET N-CH 650V 31.2A TO247-3

N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3-1

MOSFET N-CH 650V 31.2A TO247-3 Product overview: IPW65R110CFDFKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 31.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 31.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW65R110CFDFKSA1 can be used for catalog matching and distributor lookup.

Win Source Part Number: 982743-IPW65R110CFDFKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Power Dissipation (Max): 277.8W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPW65R110CFD-ND,IPW65R110CFD,SP000895232
Base Product Number: IPW65R110
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V