IPW65R190E6 is a 650V N-channel MOSFET transistor designed for high-efficiency switching applications such as PFC, PWM, and resonant converters. It is packaged in a PG-TO247 case with a maximum continuous drain current of 20.2 A at 25°C and a drain-source on-state resistance of 0.19 Ω. The device features a gate charge of 73 nC and supports avalanche energy up to 485 mJ. It meets JEDEC J-STD-20 and JESD22 qualification standards, is Pb-free, halogen-free, and rated for operating temperatures from -55°C to 150°C.
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube Product overview: IPW65R190E6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 20.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW65R190E6 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPW65R190E6 |
| Product Name | 650V 20.2A MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
| V(BR)DSS | 650 volts |
| PD | 151000 milliwatts |
