Infineon Technologies AG 650V 17.5A MOSFET Transistor IPW65R190CFD

MOSFETs N-Ch 650V 17.5A TO247-3 CoolMOS CFD2 Product overview: IPW65R190CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 17.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 17.5A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW65R190CFD can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1186487-IPW65R190CFD
Series: CoolMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Family Name: IPW65R190CFD
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.infineon.com
Manufacturer Package: PG-TO247-3
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 4.5V @ 730μA
Gate Charge (Qg) (Maximum) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1850pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 151W (Tc)
Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
Alternative Parts (Cross-Reference): STW28N60M2; STW45NM60R6046FNZ1C9; ;
Introduction Date: May 05, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

650V 17.5A 190mΩ@10V,7.3A 151W 4.5V@730uA 1 N-Channel TO-247-3 MOSFETs ROHS