Shenzhen Shengyu Electronics Technology Limited Datasheets for DRAM and SDRAM Memory Chips
Dynamic random access memory (DRAM) chips are single-transistor memory cells that use small capacitors to store each bit of memory in an addressable format that consists of rows and columns. Because capacitors are unable to hold a charge indefinitely, DRAM memory chips require a near-constant pulse of current to retain stored information.
DRAM and SDRAM Memory Chips: Learn more
| Product Name | Notes |
|---|---|
| 1G, 1.8V, DDR2, 64Mx16, 400Mhz @ | |
| 512M, 1.8V, DDR2, 32Mx16, 400Mhz | |
| IC DRAM 128MBIT PAR 54TFBGA | |
| IC DRAM 128MBIT PAR 54TSOP II | |
| IC DRAM 128MBIT PAR 90TFBGA | |
| IC DRAM 128MBIT PARALLEL 54TFBGA | |
| IC DRAM 128MBIT PARALLEL 90TFBGA | |
| IC DRAM 16MBIT PAR 50TSOP II | |
| IC DRAM 1G PARALLEL 84TWBGA | |
| IC DRAM 1G PARALLEL 84WBGA | |
| IC DRAM 1GBIT PARALLEL 60TWBGA | |
| IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IC DRAM 256MBIT PAR 54TFBGA | |
| IC DRAM 256MBIT PAR 54TSOP II | |
| IC DRAM 256MBIT PAR 84TWBGA | |
| IC DRAM 256MBIT PAR 86TSOP II | |
| IC DRAM 256MBIT PAR 90TFBGA | |
| IC DRAM 256MBIT PARALLEL 54TFBGA | |
| IC DRAM 256MBIT PARALLEL 84TWBGA | |
| IC DRAM 256MBIT PARALLEL 90LFBGA | |
| IC DRAM 256MBIT PARALLEL 90TFBGA | |
| IC DRAM 2GBIT PARALLEL 60TWBGA | |
| IC DRAM 2GBIT PARALLEL 84LFBGA | |
| IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IC DRAM 32MBIT PARALLEL 54TFBGA | |
| IC DRAM 32MBIT PARALLEL 90TFBGA | |
| IC DRAM 512MBIT PAR 54TSOP II | |
| IC DRAM 512MBIT PAR 60TWBGA | |
| IC DRAM 512MBIT PAR 84TWBGA | |
| IC DRAM 512MBIT PARALLEL 54TFBGA | |
| IC DRAM 512MBIT PARALLEL 60TWBGA | |
| IC DRAM 512MBIT PARALLEL 84TWBGA | |
| IC DRAM 512MBIT PARALLEL 90TFBGA | |
| IC DRAM 512MBIT PARALLEL 90WBGA | |
| IC DRAM 64MBIT PARALLEL 54TFBGA | |
| IC DRAM 64MBIT PARALLEL 90TFBGA |
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