SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 133MHz 6ns 54-TFBGA (8x8)
IC DRAM 128MBIT PAR 54TFBGA Product overview: IS42SM16800H-75BLI-T
SDRAM - Mobile Memory IC 128Mbit Parallel 133 MHz 6 ns 54-TFBGA (8x8)
IC DRAM 128MBIT PARALLEL 54TFBGA
IC DRAM 128MBIT PARALLEL 54TFBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42SM16800H-75BLI-TR-ND | 774-IS42SM16800H-75BLI-TR | IS42SM16800H-75BLI-TR | IS42SM16800H-75BLI-TR | IS42SM16800H-75BLI-TR |
| Product Name | Memory | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits |
| Package Type | 54-TFBGA | BGA; 54-TFBGA | BGA | ||
| Supply Voltage | 2.7V ~ 3.6V | 2.7 | 3.6V; 2.7V ~ 3.6V | 3.6V; 2.7V ~ 3.6V |