IC DRAM 512MBIT PAR 84TWBGA Product overview: IS43DR16320E-25DBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16320E-25D
SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 400MHz 400ns 84-TWBGA (8x12.5)
IC DRAM 512MBIT PARALLEL 84TWBGA
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 921658-IS43DR16320E-
Operating Temperature Range: 0°C ~ 85°C (TC)
Features: SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 84-TWBGA (8x12.5)
Package: 84-TFBGA
Package: Tray
Mounting: Surface Mount
Family Name: IS43DR16320
Categories: Integrated Circuits (ICs)
Case / Package: 84-TWBGA (8x12.5)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 209
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 19 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
IC DRAM 512MBIT PARALLEL 84TWBGA
DRAM, 32M X 16BIT, BGA-84; DRAM Type:DDR2; DRAM Density:512Mbit; DRAM Memory Configuration:32M x 16bit; Clock Frequency:400MHz; Memory Case Style:BGA; No. of Pins:84Pins; Supply Voltage Nom:1.8V; Access Time:-; MSL:- RoHS Compliant: Yes
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)
IC DRAM 512MBIT PARALLEL 84TWBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43DR16320E-25DBL | 706-1554-ND | IS43DR16320E-25DBL | 921658-IS43DR16320E-25DBL | IS43DR16320E-25DBL | 81Y1245 | IS43DR16320E-25DBL | IS43DR16320E-25DBL |
| Product Name | Memory IC and Storage Component | Memory | Memory | Memory - SDRAM - IS43DR16320E-25DBL | Integrated Circuits (ICs) - Memory | Dram, 32M X 16Bit, Bga-84; Dram Type Integrated Silicon Solution (Issi) | Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | SDRAM - DDR2; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 400 ns | |||
| Operating Temperature | 0 C (32 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | |
| Number of Words | 8000 k |
