SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel 133MHz 6ns 90-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 90TFBGA
512M, 1.8V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8Mm x 13mm) RoHS, T&R
SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 90TFBGA
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42VM32160E-75BLI-TR-ND | IS42VM32160E-75BLI-TR | 29X5188 | IS42VM32160E-75BLI-TR | IS42VM32160E-75BLI-TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | 512M, 1.8V, Mobile Sdram, 16Mx32, 133Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, T&r Integrated Silicon Solution (Issi) | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | |
| Package Type | 90-TFBGA | BGA | BGA; 90-TFBGA |
