IC DRAM 512MBIT PAR 84TWBGA Product overview: IS43DR16320C-3DBL-TR
SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 333MHz 450ps 84-TWBGA (8x12.5)
IC DRAM 512MBIT PARALLEL 84TWBGA
IC DRAM 512MBIT PARALLEL 84TWBGA
IC DRAM 512MBIT PARALLEL 84TWBGA
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 84-TWBGA (8x12.5)
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43DR16320C-3DBL-TR | IS43DR16320C-3DBL-TR-ND | IS43DR16320C-3DBL-TR | IS43DR16320C-3DBL-TR | IS43DR16320C-3DBL-TR | IS43DR16320C-3DBL-TR |
| Product Name | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | SDRAM - DDR2; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | |
| Operating Temperature | 0 C (32 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
| Number of Words | 8000 k |