IC DRAM 1GBIT PARALLEL 84TWBGA Product overview: IS43DR16640B-25DBLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16640B-25D
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-TWBGA (8x12.5)
IC DRAM 1G PARALLEL 84WBGA
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 718742-IS43DR16640B-
Packaging: Tray
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 84-TFBGA
Mounting: SMD
Technology: SDRAM - DDR2
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 400ps
Family Name: IS43DR16640B
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Manufacturer Homepage: www.issi.com
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 84-WBGA (8x12.5)
Alternative Parts (Cross-Reference): IS46DR16640B-25DBLA1
Introduction Date: January 20, 2012
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2019
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
INTEGRATED SILICON SOLUTION (ISSI) - IS43DR16640B-25DBLI - SDRAM, DDR2, 1GBIT, 1.8V, 84BGA
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)
SDRAM, DDR2, 1GBIT, 1.8V, 84BGA; DRAM Memory Configuration:64M x 16bit; Memory Case Style:BGA; No. of Pins:84Pins; IC Interface Type:SSTL; Access Time:-; Page Size:-; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; RoHS Compliant: Yes
IC DRAM 1G PARALLEL 84WBGA
IC DRAM 1GBIT PARALLEL 84TWBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Utmel Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43DR16640B-25DBLI | 706-1276-ND | IS43DR16640B-25DBLI | 718742-IS43DR16640B-25DBLI | 413-IS43DR16640B-25DBLI | IS43DR16640B-25DBLI | 53W9298 | IS43DR16640B-25DBLI | IS43DR16640B-25DBLI |
| Product Name | Memory IC and Storage Component | Memory | Memory | Memory - SDRAM - IS43DR16640B-25DBLI | INTEGRATED SILICON SOLUTION (ISSI) - IS43DR16640B-25DBLI - SDRAM, DDR2, 1GBIT, 1.8V, 84BGA | Memory | Sdram, Ddr2, 1Gbit, 1.8V, 84Bga; Dram Memory Configuration Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM Chip | DRAM Chip | SDRAM - DDR2; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | |||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 1000000 kbits | 1000000 kbits | 8000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | |||
| Number of Words | 8000 k |
