Integrated Silicon Solution, Inc. Memory IS42VM16320E-6BLI

Description
IC DRAM 512MBIT PARALLEL 54TFBGA
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Description
IC DRAM 512MBIT PARALLEL 54TFBGA
Request a Quote Datasheet

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Description
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IC DRAM 512MBIT PARALLEL 54TFBGA

IC DRAM 512MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - IS42VM16320E-6BLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)

Buy Now Datasheet
Memory - IS42VM16320E-6BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 512Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 512Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 54TFBGA

IC DRAM 512MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42VM16320E-6BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM16320E-6BLI
Integrated Circuits (ICs) - Memory IS42VM16320E-6BLI
IC DRAM 512MBIT PARALLEL 54TFBGA

IC DRAM 512MBIT PARALLEL 54TFBGA

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42VM16320E-6BLI IS42VM16320E-6BLI-ND IS42VM16320E-6BLI IS42VM16320E-6BLI IS42VM16320E-6BLI
Product Name Memory Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SDRAM - Mobile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Data Rate 166 MHz 166 MHz
Access Time 5.5 ns 5.5 ns 5.5 ns 5.5 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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