Integrated Silicon Solution, Inc. Memory IS43DR16640B-25EBLI

Description
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 450 ps 84-TWBGA (8x12.5)
Datasheet
Description
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 450 ps 84-TWBGA (8x12.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43DR16640B-25EBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 450 ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 450 ps 84-TWBGA (8x12.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43DR16640B-25EBLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR16640B-25EBLI
Integrated Circuits (ICs) - Memory IS43DR16640B-25EBLI
IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43DR16640B-25EBLI IS43DR16640B-25EBLI IS43DR16640B-25EBLI
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.4500 ns 0.4500 ns 0.4500 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
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