Integrated Silicon Solution, Inc. Memory IS42VM32100D-6BLI-TR

Description
IC DRAM 32MBIT PARALLEL 90TFBGA
Datasheet
Description
IC DRAM 32MBIT PARALLEL 90TFBGA
Datasheet

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Product
Description
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IC DRAM 32MBIT PARALLEL 90TFBGA

IC DRAM 32MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS42VM32100D-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42VM32100D-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM32100D-6BLI-TR
Integrated Circuits (ICs) - Memory IS42VM32100D-6BLI-TR
IC DRAM 32MBIT PARALLEL 90TFBGA

IC DRAM 32MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS42VM32100D-6BLI-TR IS42VM32100D-6BLI-TR IS42VM32100D-6BLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5.5 ns 5.5 ns 5.5 ns
Density 32000 kbits 32000 kbits 32000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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