Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 804353-IS43DR16640B-
Packaging: Reel
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 400ps
Supplier Device Package: 84-WBGA (8x12.5)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 84-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V
IC DRAM 1GBIT PARALLEL 84TWBGA
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-TWBGA (8x12.5)
IC DRAM 1GBIT PARALLEL 84TWBGA Product overview: IS43DR16640B-25DBLI-
1G, 1.8V, DDR2, 64Mx16, 400Mhz @ CL5, 84 ball BGA (8Mm x 12.5mm) RoHS, IT, T&R
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)
IC DRAM 1GBIT PARALLEL 84TWBGA
IC DRAM 1GBIT PARALLEL 84TWBGA
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 804353-IS43DR16640B-25DBLI-TR | IS43DR16640B-25DBLI-TR | IS43DR16640B-25DBLI-TR-ND | 774-IS43DR16640B-25DBLI-TR | 18W6785 | IS43DR16640B-25DBLI-TR | IS43DR16640B-25DBLI-TR | IS43DR16640B-25DBLI-TR |
| Product Name | Memory - SDRAM - IS43DR16640B-25DBLI-TR | Memory | Memory | Memory IC and Storage Component | 1G, 1.8V, Ddr2, 64Mx16, 400Mhz @ Cl5, 84 Ball Bga (8Mm X 12.5Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | SDRAM - DDR2; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | ||
| Cycle Time | 15 ns | |||||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Supply Voltage | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7 | 1.7V ~ 1.9V | 1.7V ~ 1.9V |
