Integrated Silicon Solution, Inc. Memory IS42S32800G-7BLI

Description
SDRAM Memory IC 256Mb (8M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM Memory IC 256Mb (8M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S32800G-7BLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 256Mb (8M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

SDRAM Memory IC 256Mb (8M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - SDRAM - IS42S32800G-7BLI - 1189031-IS42S32800G-7BLI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS42S32800G-7BLI
1189031-IS42S32800G-7BLI
Memory - SDRAM - IS42S32800G-7BLI 1189031-IS42S32800G-7BLI
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 1189031-IS42S32800G- 7BLI Packaging: Tray Mounting Style: SMD Technology: SDRAM Memory Type: Volatile Memory Size: 256Mb (8M x 32) Access Time: 5.4ns Categories: Integrated Circuits Supplier Device Package: 90-TFBGA (8x13) Temperature Range - Operating: -40°C ~ 85°C Memory Format: DRAM Manufacturer Homepage: www.issi.com Clock Frequency: 143MHz Memory Interface: Parallel Manufacturer Package: 90-TFBGA Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 240 MSL Level: 3 (168 Hours) Supply Voltage (V): 3V ~ 3.6V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 1189031-IS42S32800G-7BLI
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM
Memory Type: Volatile
Memory Size: 256Mb (8M x 32)
Access Time: 5.4ns
Categories: Integrated Circuits
Supplier Device Package: 90-TFBGA (8x13)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Manufacturer Homepage: www.issi.com
Clock Frequency: 143MHz
Memory Interface: Parallel
Manufacturer Package: 90-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 240
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V

Buy Now
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
256M, 3.3V, Sdram, 8Mx32, 143Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It Integrated Silicon Solution (Issi) - 77T0524 - Newark, An Avnet Company
Chicago, IL, United States
256M, 3.3V, Sdram, 8Mx32, 143Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It Integrated Silicon Solution (Issi)
77T0524
256M, 3.3V, Sdram, 8Mx32, 143Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It Integrated Silicon Solution (Issi) 77T0524
256M, 3.3v, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8Mm x 13mm) RoHS, IT

256M, 3.3v, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8Mm x 13mm) RoHS, IT

Supplier's Site
Memory - IS42S32800G-7BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42S32800G-7BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S32800G-7BLI
Integrated Circuits (ICs) - Memory IS42S32800G-7BLI
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Lingto Electronic Limited Newark, An Avnet Company Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S32800G-7BLI-ND IS42S32800G-7BLI 1189031-IS42S32800G-7BLI IS42S32800G-7BLI 77T0524 IS42S32800G-7BLI IS42S32800G-7BLI
Product Name Memory Memory Memory - SDRAM - IS42S32800G-7BLI Memory 256M, 3.3V, Sdram, 8Mx32, 143Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It Integrated Silicon Solution (Issi) Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip SDRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 90-TFBGA 90-TFBGA BGA; 90-TFBGA BGA
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