IC DRAM 512MBIT PARALLEL 90TFBGA
SDRAM - Mobile Memory IC 512Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 90TFBGA
| Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42SM32160E-6BLI-TR | IS42SM32160E-6BLI-TR | IS42SM32160E-6BLI-TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 5.5 ns | 5.5 ns | 5.5 ns |
| Density | 512000 kbits | 512000 kbits | 512000 kbits |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
