Integrated Silicon Solution, Inc. Memory IS43DR82560B-3DBL

Description
IC DRAM 2GBIT PARALLEL 60TWBGA
Datasheet
Description
IC DRAM 2GBIT PARALLEL 60TWBGA
Datasheet

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Description
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IC DRAM 2GBIT PARALLEL 60TWBGA

IC DRAM 2GBIT PARALLEL 60TWBGA

Supplier's Site Datasheet
Memory - IS43DR82560B-3DBL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 60-TWBGA (10.5x13)

SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 60-TWBGA (10.5x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43DR82560B-3DBL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR82560B-3DBL
Integrated Circuits (ICs) - Memory IS43DR82560B-3DBL
IC DRAM 2GBIT PARALLEL 60TWBGA

IC DRAM 2GBIT PARALLEL 60TWBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43DR82560B-3DBL IS43DR82560B-3DBL IS43DR82560B-3DBL
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4500 ns 0.4500 ns 0.4500 ns
Density 2000000 kbits 2000000 kbits 2000000 kbits
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
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