Integrated Silicon Solution, Inc. Memory IS42VM16800H-6BLI

Description
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42VM16800H-6BLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)

Buy Now Datasheet
Memory - SDRAM - IS42VM16800H-6BLI - 811766-IS42VM16800H-6BLI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS42VM16800H-6BLI
811766-IS42VM16800H-6BLI
Memory - SDRAM - IS42VM16800H-6BLI 811766-IS42VM16800H-6BLI
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 811766-IS42VM16800H- 6BLI Packaging: Tray Mounting Style: SMD Technology: SDRAM - Mobile Memory Type: Volatile Memory Size: 128Mb (8M x 16) Access Time: 5.5ns Supplier Device Package: 54-TFBGA (8x8) Temperature Range - Operating: -40°C ~ 85°C Memory Format: DRAM Clock Frequency: 166MHz Memory Interface: Parallel Manufacturer Package: 54-TFBGA Popularity: Low Fake Threat In the Open Market: 78 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 348 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.95V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 811766-IS42VM16800H-6BLI
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - Mobile
Memory Type: Volatile
Memory Size: 128Mb (8M x 16)
Access Time: 5.5ns
Supplier Device Package: 54-TFBGA (8x8)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 166MHz
Memory Interface: Parallel
Manufacturer Package: 54-TFBGA
Popularity: Low
Fake Threat In the Open Market: 78 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 348
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.95V

Buy Now
Memory - IS42VM16800H-6BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42VM16800H-6BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM16800H-6BLI
Integrated Circuits (ICs) - Memory IS42VM16800H-6BLI
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42VM16800H-6BLI-ND 811766-IS42VM16800H-6BLI IS42VM16800H-6BLI IS42VM16800H-6BLI IS42VM16800H-6BLI
Product Name Memory Memory - SDRAM - IS42VM16800H-6BLI Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 54-TFBGA BGA; 54-TFBGA BGA
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