Integrated Silicon Solution, Inc. Memory IS42SM32160C-7BLI

Description
SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel 133MHz 5.4ns 60-TFBGA (6.4x10.1)
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Description
SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel 133MHz 5.4ns 60-TFBGA (6.4x10.1)
Request a Quote
Datasheet
Datasheet Summary
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The IS42SM32160C-7BLI is a 512Mb Mobile Synchronous DRAM from Quarktwin Technology Ltd., configured as a quad 4M x 32 DRAM. It operates at a power supply of 3.3V and supports a clock frequency of 143 MHz with a CAS latency of 3, achieving a cycle time of 7.0 ns. The device features programmable CAS latency options of 2 and 3, as well as programmable burst lengths of 1, 2, 4, 8, and full page. It includes advanced functionalities such as auto refresh, temperature compensated self-refresh, and partial array self-refresh modes. The memory is organized into 8192 rows and 512 columns, with a refresh count of 8K every 64 ms. The package dimensions are 8x13 mm in a 90-ball BGA format. The operating temperature range for this part is industrial, from -40¬8C to +85¬8C, making it suitable for a variety of applications that require reliable performance in challenging environments.

Datasheet Summary
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The IS42SM32160C-7BLI is a 512Mb Mobile Synchronous DRAM from Quarktwin Technology Ltd., configured as a quad 4M x 32 DRAM. It operates at a power supply of 3.3V and supports a clock frequency of 143 MHz with a CAS latency of 3, achieving a cycle time of 7.0 ns. The device features programmable CAS latency options of 2 and 3, as well as programmable burst lengths of 1, 2, 4, 8, and full page. It includes advanced functionalities such as auto refresh, temperature compensated self-refresh, and partial array self-refresh modes. The memory is organized into 8192 rows and 512 columns, with a refresh count of 8K every 64 ms. The package dimensions are 8x13 mm in a 90-ball BGA format. The operating temperature range for this part is industrial, from -40¬8C to +85¬8C, making it suitable for a variety of applications that require reliable performance in challenging environments.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42SM32160C-7BLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel 133MHz 5.4ns 60-TFBGA (6.4x10.1)

SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel 133MHz 5.4ns 60-TFBGA (6.4x10.1)

Buy Now Datasheet
Memory - SDRAM - IS42SM32160C-7BLI - 921646-IS42SM32160C-7BLI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS42SM32160C-7BLI
921646-IS42SM32160C-7BLI
Memory - SDRAM - IS42SM32160C-7BLI 921646-IS42SM32160C-7BLI
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 921646-IS42SM32160C- 7BLI Operating Temperature Range: -40°C ~ 85°C (TA) Features: SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel 133 MHz 5.4 ns 60-TFBGA (6.4x10.1) Package: Tray Package: 60-TFBGA Mounting: Surface Mount Part Status: Discontinued at Digi-Key Categories: Integrated Circuits (ICs) Case / Package: 60-TFBGA (6.4x10.1) ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 94 pct. Supply and Demand Status: Balance Quantity per package: 240 MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0028

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 921646-IS42SM32160C-7BLI
Operating Temperature Range: -40°C ~ 85°C (TA)
Features: SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel 133 MHz 5.4 ns 60-TFBGA (6.4x10.1)
Package: Tray
Package: 60-TFBGA
Mounting: Surface Mount
Part Status: Discontinued at Digi-Key
Categories: Integrated Circuits (ICs)
Case / Package: 60-TFBGA (6.4x10.1)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 94 pct.
Supply and Demand Status: Balance
Quantity per package: 240
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42SM32160C-7BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42SM32160C-7BLI
Integrated Circuits (ICs) - Memory IS42SM32160C-7BLI
IC DRAM 512MBIT PARALLEL 90WBGA

IC DRAM 512MBIT PARALLEL 90WBGA

Supplier's Site
Memory - IS42SM32160C-7BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 5.4 ns 60-TFBGA (6.4x10.1)

SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 5.4 ns 60-TFBGA (6.4x10.1)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 90WBGA

IC DRAM 512MBIT PARALLEL 90WBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42SM32160C-7BLI-ND 921646-IS42SM32160C-7BLI IS42SM32160C-7BLI IS42SM32160C-7BLI IS42SM32160C-7BLI
Product Name Memory Memory - SDRAM - IS42SM32160C-7BLI Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 90-LFBGA BGA; 60-TFBGA (6.4x10.1) BGA BGA; 60-TFBGA
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