IC DRAM 256MBIT PARALLEL 90TFBGA
SDRAM - Mobile Memory IC 256Mb (8M x 32) Parallel 133MHz 6ns 90-TFBGA (8x13)
IC DRAM 256MBIT PARALLEL 90TFBGA
IC DRAM 256MBIT PARALLEL 90TFBGA
256M, 1.8V, Mobile SDRAM, 8Mx32, 133Mhz, 90 ball BGA (8Mm x 13mm) RoHS, IT, T&R
SDRAM - Mobile Memory IC 256Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)
| ODG (Origin Data Global) | DigiKey | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42VM32800K-75BLI-TR | IS42VM32800K-75BLI-TR-ND | IS42VM32800K-75BLI-TR | IS42VM32800K-75BLI-TR | 29X5194 | IS42VM32800K-75BLI-TR |
| Product Name | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory | 256M, 1.8V, Mobile Sdram, 8Mx32, 133Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) | Memory |
| Memory Category | SDRAM - Mobile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 133 MHz | 133 MHz | ||||
| Access Time | 6 ns | 6 ns | 6 ns | 6 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
