Integrated Silicon Solution, Inc. Memory IS42SM32100C-6BLI-TR

Description
SDRAM - Mobile Memory IC 32Mb (1M x 32) Parallel 166MHz 5.5ns 54-TFBGA (8x8)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 32Mb (1M x 32) Parallel 166MHz 5.5ns 54-TFBGA (8x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42SM32100C-6BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 32Mb (1M x 32) Parallel 166MHz 5.5ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 32Mb (1M x 32) Parallel 166MHz 5.5ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42SM32100C-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42SM32100C-6BLI-TR
Integrated Circuits (ICs) - Memory IS42SM32100C-6BLI-TR
IC DRAM 32MBIT PARALLEL 54TFBGA

IC DRAM 32MBIT PARALLEL 54TFBGA

Supplier's Site
IC DRAM 32MBIT PARALLEL 54TFBGA

IC DRAM 32MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - IS42SM32100C-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42SM32100C-6BLI-TR-ND IS42SM32100C-6BLI-TR IS42SM32100C-6BLI-TR IS42SM32100C-6BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 32000 kbits 32000 kbits 32000 kbits 32000 kbits
Package Type 54-TFBGA BGA BGA; 54-TFBGA
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