Integrated Silicon Solution, Inc. Memory IS42VM16160D-8BL

Description
SDRAM - Mobile Memory IC 256Mb (16M x 16) Parallel 125MHz 6ns 54-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 256Mb (16M x 16) Parallel 125MHz 6ns 54-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42VM16160D-8BL-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 256Mb (16M x 16) Parallel 125MHz 6ns 54-TFBGA (8x13)

SDRAM - Mobile Memory IC 256Mb (16M x 16) Parallel 125MHz 6ns 54-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42VM16160D-8BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM16160D-8BL
Integrated Circuits (ICs) - Memory IS42VM16160D-8BL
IC DRAM 256MBIT PARALLEL 54TFBGA

IC DRAM 256MBIT PARALLEL 54TFBGA

Supplier's Site
IC DRAM 256MBIT PARALLEL 54TFBGA

IC DRAM 256MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - IS42VM16160D-8BL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 256Mbit Parallel 125 MHz 6 ns 54-TFBGA (8x13)

SDRAM - Mobile Memory IC 256Mbit Parallel 125 MHz 6 ns 54-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42VM16160D-8BL-ND IS42VM16160D-8BL IS42VM16160D-8BL IS42VM16160D-8BL
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 54-TFBGA BGA BGA; 54-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712220 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Pins 8
Supply Voltage 3.6 v, 2.7 v
View Details
Memory - 5962-88735033X - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 35 ns
Density 16 kbits
View Details
Memory - S29GL032N11TFIV10 - Quarktwin Technology Ltd.
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - MYX4DD3K256M16BG1 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details