Integrated Silicon Solution, Inc. Memory IS42S83200J-7BL

Description
IC DRAM 256MBIT PARALLEL 54TFBGA
Datasheet
Description
IC DRAM 256MBIT PARALLEL 54TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 256MBIT PARALLEL 54TFBGA

IC DRAM 256MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - IS42S83200J-7BL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)

SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42S83200J-7BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S83200J-7BL
Integrated Circuits (ICs) - Memory IS42S83200J-7BL
IC DRAM 256MBIT PARALLEL 54TFBGA

IC DRAM 256MBIT PARALLEL 54TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS42S83200J-7BL IS42S83200J-7BL IS42S83200J-7BL
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5.4 ns 5.4 ns 5.4 ns
Density 256000 kbits 256000 kbits 256000 kbits
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

SN74ACT2227 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2227DWR - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
6 suppliers
SDRAM - 2420777P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - AS8F2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 90 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details