IC DRAM 1GBIT PARALLEL 84TWBGA Product overview: IS43DR16640B-3DBL-TR
Category: DRAM
Win Source Part Number: 1446856-IS43DR16640B
Manufacturer: ISSI, Integrated Silicon Solution Inc
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 333MHz 450ps 84-TWBGA (8x12.5)
IC DRAM 1GBIT PARALLEL 84TWBGA
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 84-TWBGA (8x12.5)
1G, 1.8V, DDR2, 64Mx16, 333Mhz @ CL5, 84 ball BGA (8Mm x 12.5mm) RoHS, T&R
IC DRAM 1GBIT PARALLEL 84TWBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Lingto Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43DR16640B-3DBL-TR | 1446856-IS43DR16640B-3DBL-TR | IS43DR16640B-3DBL-TR-ND | IS43DR16640B-3DBL-TR | IS43DR16640B-3DBL-TR | 18W6793 | IS43DR16640B-3DBL-TR |
| Product Name | Memory IC and Storage Component | DRAM | Memory | Memory | Memory | 1G, 1.8V, Ddr2, 64Mx16, 333Mhz @ Cl5, 84 Ball Bga (8Mm X 12.5Mm) Rohs, T&r Integrated Silicon Solution (Issi) | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | ||
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | |||
| Operating Temperature | 0 C (32 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |||
| Density | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | |||
| Number of Words | 8000 k |