IC DRAM 256MBIT PAR 90TFBGA Product overview: IS42S32800G-7BL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32800G-7BL can be used for catalog matching and distributor lookup.
SDRAM Memory IC 256Mb (8M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
Win Source Part Number: 945377-IS42S32800G-7
Series: *
Categories: Memory
IC DRAM 256MBIT PARALLEL 90TFBGA
IC DRAM 256MBIT PAR 90TFBGA
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)
256M, 3.3v, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8Mm x 13mm) RoHS
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS42S32800G-7BL | IS42S32800G-7BL-ND | 945377-IS42S32800G-7BL | IS42S32800G-7BL | IS42S32800G-7BL | IS42S32800G-7BL | 77T0522 |
| Product Name | Memory IC and Storage Component | Memory | Memory - SDRAM - IS42S32800G-7BL | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | 256M, 3.3V, Sdram, 8Mx32, 143Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs Integrated Silicon Solution (Issi) |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | ||||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||||
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | ||
| Number of Words | 2000 k |
