The IS42VM32100D-75BLI is a low power 32Mbit Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. It operates at a frequency of 133 MHz with a speed of 7.5 ns and is housed in a 90-ball BGA package. This memory device supports fully synchronous operation, with all inputs and outputs synchronized to the rising edge of the clock. It is compatible with LVCMOS voltage levels and operates on a power supply of 1.8V. Key features include auto refresh and self refresh capabilities, programmable burst length and type, and a programmable CAS latency of 2 or 3 clocks. The device also supports a data mask function, internal dual bank operation, and special functions such as Partial Array Self Refresh (PASR) and Temperature Compensated Self Refresh (TCSR). Additionally, it offers programmable driver strength control and a deep power down mode, making it suitable for low power applications. The operating temperature range is from -40¬8C to +85¬8C, which is ideal for industrial applications.
IC DRAM 32MBIT PARALLEL 90TFBGA
IC DRAM 32MBIT PARALLEL 90TFBGA
SDRAM - Mobile Memory IC 32Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)
| Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42VM32100D-75BLI | IS42VM32100D-75BLI | IS42VM32100D-75BLI |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 6 ns | 6 ns | 6 ns |
| Density | 32000 kbits | 32000 kbits | 32000 kbits |
| Data Rate | 133 MHz |
