Integrated Silicon Solution, Inc. Memory IS42VM32100D-75BLI

Description
IC DRAM 32MBIT PARALLEL 90TFBGA
Description
IC DRAM 32MBIT PARALLEL 90TFBGA
Datasheet
Datasheet Summary
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The IS42VM32100D-75BLI is a low power 32Mbit Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. It operates at a frequency of 133 MHz with a speed of 7.5 ns and is housed in a 90-ball BGA package. This memory device supports fully synchronous operation, with all inputs and outputs synchronized to the rising edge of the clock. It is compatible with LVCMOS voltage levels and operates on a power supply of 1.8V. Key features include auto refresh and self refresh capabilities, programmable burst length and type, and a programmable CAS latency of 2 or 3 clocks. The device also supports a data mask function, internal dual bank operation, and special functions such as Partial Array Self Refresh (PASR) and Temperature Compensated Self Refresh (TCSR). Additionally, it offers programmable driver strength control and a deep power down mode, making it suitable for low power applications. The operating temperature range is from -40¬8C to +85¬8C, which is ideal for industrial applications.

Datasheet Summary
Powered by GS/AI

The IS42VM32100D-75BLI is a low power 32Mbit Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. It operates at a frequency of 133 MHz with a speed of 7.5 ns and is housed in a 90-ball BGA package. This memory device supports fully synchronous operation, with all inputs and outputs synchronized to the rising edge of the clock. It is compatible with LVCMOS voltage levels and operates on a power supply of 1.8V. Key features include auto refresh and self refresh capabilities, programmable burst length and type, and a programmable CAS latency of 2 or 3 clocks. The device also supports a data mask function, internal dual bank operation, and special functions such as Partial Array Self Refresh (PASR) and Temperature Compensated Self Refresh (TCSR). Additionally, it offers programmable driver strength control and a deep power down mode, making it suitable for low power applications. The operating temperature range is from -40¬8C to +85¬8C, which is ideal for industrial applications.

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 32MBIT PARALLEL 90TFBGA

IC DRAM 32MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42VM32100D-75BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM32100D-75BLI
Integrated Circuits (ICs) - Memory IS42VM32100D-75BLI
IC DRAM 32MBIT PARALLEL 90TFBGA

IC DRAM 32MBIT PARALLEL 90TFBGA

Supplier's Site
Memory - IS42VM32100D-75BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 32Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 32Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS42VM32100D-75BLI IS42VM32100D-75BLI IS42VM32100D-75BLI
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 6 ns 6 ns 6 ns
Density 32000 kbits 32000 kbits 32000 kbits
Data Rate 133 MHz
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