Integrated Silicon Solution, Inc. Memory IS42VM32400H-6BLI-TR

Description
SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
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Description
SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote
Datasheet
Datasheet Summary
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The IS42VM32400H-6BLI-TR is a mobile synchronous DRAM memory chip from Quarktwin Technology Ltd., featuring a capacity of 128 Mbits organized as 4 banks of 1,048,576 words x 32 bits. It operates at a frequency of 166 MHz with a speed of 6 ns, making it suitable for high-performance applications. The device supports fully synchronous operation, with all inputs and outputs synchronized to the rising edge of the clock. This memory chip is compatible with LVCMOS voltage levels and operates on power supply voltages of 3.3V, 2.5V, or 1.8V. It includes features such as auto refresh, self-refresh, programmable burst length, and CAS latency options of 2 or 3 clocks. The IS42VM32400H-6BLI-TR also supports various operational modes, including deep power down and partial array self-refresh, which can enhance power efficiency in mobile applications. Engineers considering this product should note its automotive temperature range of -40¬8C to +85¬8C, making it suitable for automotive and other temperature-sensitive applications. The device is packaged in a 90-ball BGA format, facilitating compact designs.

Datasheet Summary
Powered by GS/AI

The IS42VM32400H-6BLI-TR is a mobile synchronous DRAM memory chip from Quarktwin Technology Ltd., featuring a capacity of 128 Mbits organized as 4 banks of 1,048,576 words x 32 bits. It operates at a frequency of 166 MHz with a speed of 6 ns, making it suitable for high-performance applications. The device supports fully synchronous operation, with all inputs and outputs synchronized to the rising edge of the clock. This memory chip is compatible with LVCMOS voltage levels and operates on power supply voltages of 3.3V, 2.5V, or 1.8V. It includes features such as auto refresh, self-refresh, programmable burst length, and CAS latency options of 2 or 3 clocks. The IS42VM32400H-6BLI-TR also supports various operational modes, including deep power down and partial array self-refresh, which can enhance power efficiency in mobile applications. Engineers considering this product should note its automotive temperature range of -40¬8C to +85¬8C, making it suitable for automotive and other temperature-sensitive applications. The device is packaged in a 90-ball BGA format, facilitating compact designs.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42VM32400H-6BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

Buy Now Datasheet
Memory - IS42VM32400H-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42VM32400H-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM32400H-6BLI-TR
Integrated Circuits (ICs) - Memory IS42VM32400H-6BLI-TR
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42VM32400H-6BLI-TR-ND IS42VM32400H-6BLI-TR IS42VM32400H-6BLI-TR IS42VM32400H-6BLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 90-TFBGA BGA; 90-TFBGA BGA
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