The IS43DR16128B-3DBL is a 2Gb DDR2 SDRAM memory chip from Quarktwin Technology Ltd. It operates at a voltage of 1.8V ¬±0.1V and features a double data rate interface, allowing for two data transfers per clock cycle. The device supports a 4-bit prefetch architecture and includes eight internal banks for concurrent operations. It offers programmable CAS latency options of 3, 4, 5, 6, and 7, along with adjustable data-output drive strength and on-die termination. This memory chip is available in an 84-ball WBGA package and supports a cycle time of 3.0ns at CL=5 for DDR2-667 and 2.5ns at CL=6 for DDR2-800E. It is suitable for commercial, industrial, and automotive applications, with temperature ranges from -40¬8C to 105¬8C depending on the specific variant. The IS43DR16128B-3DBL is designed for burst-oriented read and write accesses, making it a viable option for applications requiring high-speed memory performance.
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 921652-IS43DR16128B-
Operating Temperature Range: 0°C ~ 85°C (TC)
Features: SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 333 MHz 450 ps 84-TW-BGA (10.5x13.5)
Package: Tray
Package: 84-TFBGA
Mounting: Surface Mount
Family Name: IS43DR16128
Categories: Integrated Circuits (ICs)
Case / Package: 84-TW-BGA (10.5x13.5)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Balance
Quantity per package: 162
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
IC DRAM 2GBIT PARALLEL 84TWBGA Product overview: IS43DR16128B-3DBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16128B-3DB
IC DRAM 2GBIT PARALLEL 84TWBGA
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 84-TW-BGA (10.5x13.5)
IC DRAM 2GBIT PARALLEL 84TWBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 921652-IS43DR16128B-3DBL | 774-IS43DR16128B-3DBL | IS43DR16128B-3DBL | IS43DR16128B-3DBL | IS43DR16128B-3DBL |
| Product Name | Memory - SDRAM - IS43DR16128B-3DBL | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 C (32 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | |
| Package Type | BGA; 84-TW-BGA (10.5x13.5) | BGA | BGA; 84-TFBGA | ||
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | |
| Density | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits |
