SDRAM Memory IC 256Mb (32M x 8) Parallel 143MHz 5.4ns 54-TFBGA (8x8)
256M, 3.3V, SDRAM, 32Mx8, 143MHz, 54 ball BGA (8Mm x 8mm) RoHS, IT
IC DRAM 256MBIT PARALLEL 54TFBGA
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)
IC DRAM 256MBIT PAR 54TFBGA
| DigiKey | Newark, An Avnet Company | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42S83200G-7BLI-ND | 18W6766 | IS42S83200G-7BLI | IS42S83200G-7BLI | IS42S83200G-7BLI |
| Product Name | Memory | 256M, 3.3V, Sdram, 32Mx8, 143Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, It Integrated Silicon Solution (Issi) | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | |
| Package Type | 54-TFBGA | BGA; 54-TFBGA |
