Integrated Silicon Solution, Inc. Memory IS42S81600E-6TLI-TR

Description
SDRAM Memory IC 128Mb (16M x 8) Parallel 166MHz 5.4ns 54-TSOP II
Request a Quote Datasheet
Description
SDRAM Memory IC 128Mb (16M x 8) Parallel 166MHz 5.4ns 54-TSOP II
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S81600E-6TLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 128Mb (16M x 8) Parallel 166MHz 5.4ns 54-TSOP II

SDRAM Memory IC 128Mb (16M x 8) Parallel 166MHz 5.4ns 54-TSOP II

Buy Now Datasheet
Memory IC and Storage Component - 774-IS42S81600E-6TLI-TR - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS42S81600E-6TLI-TR
Memory IC and Storage Component 774-IS42S81600E-6TLI-TR
IC DRAM 128MBIT PAR 54TSOP II Product overview: IS42S81600E-6TLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S81600E-6TLI -TR can be used for catalog matching and distributor lookup.

IC DRAM 128MBIT PAR 54TSOP II Product overview: IS42S81600E-6TLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S81600E-6TLI-TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - IS42S81600E-6TLI-TR - 205528-IS42S81600E-6TLI-TR - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS42S81600E-6TLI-TR
205528-IS42S81600E-6TLI-TR
Memory - SDRAM - IS42S81600E-6TLI-TR 205528-IS42S81600E-6TLI-TR
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 205528-IS42S81600E-6 TLI-TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: SDRAM Memory Type: Volatile Memory Size: 128Mb (16M x 8) Access Time: 5.4ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 54-TSOP II Supply Voltage - Operating: 3 V to 3.6 V Memory Format: DRAM Max Frequency: 166MHz Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 205528-IS42S81600E-6TLI-TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM
Memory Type: Volatile
Memory Size: 128Mb (16M x 8)
Access Time: 5.4ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 54-TSOP II
Supply Voltage - Operating: 3 V to 3.6 V
Memory Format: DRAM
Max Frequency: 166MHz
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42S81600E-6TLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S81600E-6TLI-TR
Integrated Circuits (ICs) - Memory IS42S81600E-6TLI-TR
IC DRAM 128MBIT PAR 54TSOP II

IC DRAM 128MBIT PAR 54TSOP II

Supplier's Site
IC DRAM 128MBIT PAR 54TSOP II

IC DRAM 128MBIT PAR 54TSOP II

Supplier's Site Datasheet
Memory - IS42S81600E-6TLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II

SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S81600E-6TLI-TR-ND 774-IS42S81600E-6TLI-TR 205528-IS42S81600E-6TLI-TR IS42S81600E-6TLI-TR IS42S81600E-6TLI-TR IS42S81600E-6TLI-TR
Product Name Memory Memory IC and Storage Component Memory - SDRAM - IS42S81600E-6TLI-TR Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type TSOP; "54-TSOP (0.400"", 10.16mm Width)" TSOP; Tape & Reel (TR) SOP; 54-TSOP II 54-TSOP (0.400\", 10.16mm Width)
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