IC DRAM 512MBIT PAR 60TWBGA Product overview: IS43DR86400D-25DBLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR86400D-25D
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 714589-IS43DR86400D-
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (64M x 8)
Access Time: 400ps
Categories: Integrated Circuits
Supplier Device Package: 60-TWBGA (8x10.5)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-TFBGA
Popularity: Low
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 242
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-TWBGA (8x10.5)
DRAM, 512MBIT, 400MHZ, BGA-60; DRAM Memory Configuration:64M x 8bit; Memory Case Style:BGA; No. of Pins:60Pins; IC Interface Type:Parallel; Access Time:400ps; Page Size:-; Operating Temperature Min:-40°C; Operating Temperature RoHS Compliant: Yes
IC DRAM 512MBIT PARALLEL 60TWBGA
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-TWBGA (8x10.5)
IC DRAM 512MBIT PARALLEL 60TWBGA
IC DRAM 512MBIT PAR 60TWBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43DR86400D-25DBLI | 714589-IS43DR86400D-25DBLI | IS43DR86400D-25DBLI-ND | 65AC6014 | IS43DR86400D-25DBLI | IS43DR86400D-25DBLI | IS43DR86400D-25DBLI | IS43DR86400D-25DBLI |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - IS43DR86400D-25DBLI | Memory | Dram, 512Mbit, 400Mhz, Bga-60; Dram Memory Configuration Integrated Silicon Solution (Issi) | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | SDRAM - DDR2; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | ||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | ||
| Number of Words | 16000 k |
