Integrated Silicon Solution, Inc. Memory IC and Storage Component IS43DR16128B-3DBL-TR

Description
IC DRAM 2GBIT PARALLEL 84TWBGA Product overview: IS43DR16128B-3DBL-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16128B-3DB L-TR can be used for catalog matching and distributor lookup.
  • Memory IC and Storage Component - 774-IS43DR16128B-3DBL-TR - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Integrated Circuits (ICs) - Memory - 1178146-IS43DR16128B-3DBL-TR - Win Source Electronics
    Win Source Electronics
  • Integrated Circuits (ICs) - Memory - IS43DR16128B-3DBL-TR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - IS43DR16128B-3DBL-TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - IS43DR16128B-3DBL-TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - IS43DR16128B-3DBL-TR - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
IC DRAM 2GBIT PARALLEL 84TWBGA Product overview: IS43DR16128B-3DBL-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16128B-3DB L-TR can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The IS43DR16128B-3DBL-TR is a 2Gb DDR2 SDRAM memory device featuring a double-data-rate architecture that allows for high-speed operation with a 4-bit prefetch. It operates at a voltage of 1.8V ±0.1V and is compatible with JEDEC standard I/O levels. The device supports various CAS latencies (CL) of 3, 4, 5, 6, and 7, along with programmable additive latency options. It includes eight internal banks for concurrent operations and offers adjustable data-output drive strength. This memory chip is available in an 84-ball WBGA package and supports burst lengths of 4 or 8. The timing specifications include a cycle time of 2.5ns at CL=6 for DDR2-800E and 3.0ns at CL=5 for DDR2-667D. The device is suitable for commercial, industrial, and automotive applications, with temperature ranges from 0°C to 85°C for commercial use and -40°C to 95°C or -40°C to 105°C for automotive grades. The IS43DR16128B-3DBL-TR is designed for applications requiring reliable and efficient memory performance.

Datasheet Summary
Powered by GS/AI

The IS43DR16128B-3DBL-TR is a 2Gb DDR2 SDRAM memory device featuring a double-data-rate architecture that allows for high-speed operation with a 4-bit prefetch. It operates at a voltage of 1.8V ±0.1V and is compatible with JEDEC standard I/O levels. The device supports various CAS latencies (CL) of 3, 4, 5, 6, and 7, along with programmable additive latency options. It includes eight internal banks for concurrent operations and offers adjustable data-output drive strength. This memory chip is available in an 84-ball WBGA package and supports burst lengths of 4 or 8. The timing specifications include a cycle time of 2.5ns at CL=6 for DDR2-800E and 3.0ns at CL=5 for DDR2-667D. The device is suitable for commercial, industrial, and automotive applications, with temperature ranges from 0°C to 85°C for commercial use and -40°C to 95°C or -40°C to 105°C for automotive grades. The IS43DR16128B-3DBL-TR is designed for applications requiring reliable and efficient memory performance.

Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 774-IS43DR16128B-3DBL-TR - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-IS43DR16128B-3DBL-TR
Memory IC and Storage Component 774-IS43DR16128B-3DBL-TR
IC DRAM 2GBIT PARALLEL 84TWBGA Product overview: IS43DR16128B-3DBL-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16128B-3DB L-TR can be used for catalog matching and distributor lookup.

IC DRAM 2GBIT PARALLEL 84TWBGA Product overview: IS43DR16128B-3DBL-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16128B-3DBL-TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 1178146-IS43DR16128B-3DBL-TR - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1178146-IS43DR16128B-3DBL-TR
Integrated Circuits (ICs) - Memory 1178146-IS43DR16128B-3DBL-TR
Win Source Part Number: 1178146-IS43DR16128B -3DBL-TR Category: Integrated Circuits (ICs)>Memory Package: Tape & Reel (TR) Standard Package: 1,500 Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 2Gb (128M x 16) Access Time: 450 ps Voltage - Supply: 1.7V ~ 1.9V Package / Case: 84-TFBGA Supplier Device Package: 84-TW-BGA (10.5x13.5) Temperature Range - Operating: 0°C ~ 85°C (TC) Memory Format: DRAM Clock Frequency: 333 MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0036 Mfr: ISSI, Integrated Silicon Solution Inc Base Product Number: IS43DR16128

Win Source Part Number: 1178146-IS43DR16128B-3DBL-TR
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel (TR)
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 2Gb (128M x 16)
Access Time: 450 ps
Voltage - Supply: 1.7V ~ 1.9V
Package / Case: 84-TFBGA
Supplier Device Package: 84-TW-BGA (10.5x13.5)
Temperature Range - Operating: 0°C ~ 85°C (TC)
Memory Format: DRAM
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
Mfr: ISSI, Integrated Silicon Solution Inc
Base Product Number: IS43DR16128

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43DR16128B-3DBL-TR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR16128B-3DBL-TR
Integrated Circuits (ICs) - Memory IS43DR16128B-3DBL-TR
IC DRAM 2GBIT PARALLEL 84TWBGA

IC DRAM 2GBIT PARALLEL 84TWBGA

Supplier's Site
Memory - IS43DR16128B-3DBL-TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
IS43DR16128B-3DBL-TR
Memory IS43DR16128B-3DBL-TR
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 84-TW-BGA (10.5x13.5)

SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 84-TW-BGA (10.5x13.5)

Buy Now Datasheet
Memory - IS43DR16128B-3DBL-TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
IS43DR16128B-3DBL-TR
Memory IS43DR16128B-3DBL-TR
IC DRAM 2GBIT PARALLEL 84TWBGA

IC DRAM 2GBIT PARALLEL 84TWBGA

Supplier's Site Datasheet
Memory - IS43DR16128B-3DBL-TR - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
IS43DR16128B-3DBL-TR
Memory IS43DR16128B-3DBL-TR
IC DRAM 2GBIT PARALLEL 84TWBGA

IC DRAM 2GBIT PARALLEL 84TWBGA

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited ODG (Origin Data Global)
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-IS43DR16128B-3DBL-TR 1178146-IS43DR16128B-3DBL-TR IS43DR16128B-3DBL-TR IS43DR16128B-3DBL-TR IS43DR16128B-3DBL-TR IS43DR16128B-3DBL-TR
Product Name Memory IC and Storage Component Integrated Circuits (ICs) - Memory Integrated Circuits (ICs) - Memory Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip SDRAM - DDR2; DRAM Chip
Access Time 0.4500 ns 0.4500 ns 0.4500 ns 0.4500 ns 0.4500 ns 0.4500 ns
Operating Temperature 0 C (32 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits 2000000 kbits 2000000 kbits
Number of Words 16000 k
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