The IS43DR16128B-3DBL-TR is a 2Gb DDR2 SDRAM memory device featuring a double-data-rate architecture that allows for high-speed operation with a 4-bit prefetch. It operates at a voltage of 1.8V ¬±0.1V and is compatible with JEDEC standard I/O levels. The device supports various CAS latencies (CL) of 3, 4, 5, 6, and 7, along with programmable additive latency options. It includes eight internal banks for concurrent operations and offers adjustable data-output drive strength. This memory chip is available in an 84-ball WBGA package and supports burst lengths of 4 or 8. The timing specifications include a cycle time of 2.5ns at CL=6 for DDR2-800E and 3.0ns at CL=5 for DDR2-667D. The device is suitable for commercial, industrial, and automotive applications, with temperature ranges from 0¬8C to 85¬8C for commercial use and -40¬8C to 95¬8C or -40¬8C to 105¬8C for automotive grades. The IS43DR16128B-3DBL-TR is designed for applications requiring reliable and efficient memory performance.
IC DRAM 2GBIT PARALLEL 84TWBGA Product overview: IS43DR16128B-3DBL-TR
Win Source Part Number: 1178146-IS43DR16128B
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel (TR)
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 2Gb (128M x 16)
Access Time: 450 ps
Voltage - Supply: 1.7V ~ 1.9V
Package / Case: 84-TFBGA
Supplier Device Package: 84-TW-BGA (10.5x13.5)
Temperature Range - Operating: 0°C ~ 85°C (TC)
Memory Format: DRAM
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
Mfr: ISSI, Integrated Silicon Solution Inc
Base Product Number: IS43DR16128
IC DRAM 2GBIT PARALLEL 84TWBGA
IC DRAM 2GBIT PARALLEL 84TWBGA
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 84-TW-BGA (10.5x13.5)
IC DRAM 2GBIT PARALLEL 84TWBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43DR16128B-3DBL-TR | 1178146-IS43DR16128B-3DBL-TR | IS43DR16128B-3DBL-TR | IS43DR16128B-3DBL-TR | IS43DR16128B-3DBL-TR | IS43DR16128B-3DBL-TR |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | SDRAM - DDR2; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns |
| Operating Temperature | 0 C (32 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | |
| Density | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | |
| Number of Words | 16000 k |
