IC DRAM 512MBIT PARALLEL 90TFBGA
SDRAM - Mobile Memory IC 512Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 90TFBGA
| Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42SM32160E-6BLI | IS42SM32160E-6BLI | IS42SM32160E-6BLI |
| Product Name | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 166 MHz | ||
| Access Time | 5.5 ns | 5.5 ns | 5.5 ns |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
