IC DRAM 512MBIT PARALLEL 90TFBGA
IC DRAM 512MBIT PARALLEL 90TFBGA
SDRAM - Mobile Memory IC 512Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)
| Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42SM32160E-6BLI | IS42SM32160E-6BLI | IS42SM32160E-6BLI |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.5 ns | 5.5 ns | 5.5 ns |
| Density | 512000 kbits | 512000 kbits | 512000 kbits |
| Data Rate | 166 MHz |
