Shenzhen Shengyu Electronics Technology Limited Datasheets for DRAM and SDRAM Memory Chips
Dynamic random access memory (DRAM) chips are single-transistor memory cells that use small capacitors to store each bit of memory in an addressable format that consists of rows and columns. Because capacitors are unable to hold a charge indefinitely, DRAM memory chips require a near-constant pulse of current to retain stored information.
DRAM and SDRAM Memory Chips: Learn more
| Product Name | Notes |
|---|---|
| IC DRAM 128MBIT PAR 54VFBGA | |
| IC DRAM 128MBIT PAR 66TSOP | |
| IC DRAM 128MBIT PAR 90VFBGA | |
| IC DRAM 128MBIT PARALLEL 66TSOP | |
| IC DRAM 1GBIT PAR 167MHZ 66TSOP | |
| IC DRAM 1GBIT PAR 60FBGA | |
| IC DRAM 1GBIT PAR 84FBGA | |
| IC DRAM 1GBIT PAR 92FBGA | |
| IC DRAM 1GBIT PARALLEL 60FBGA | |
| IC DRAM 1GBIT PARALLEL 66TSOP | |
| IC DRAM 1GBIT PARALLEL 84FBGA | |
| IC DRAM 1GBIT PARALLEL 92FBGA | |
| IC DRAM 1GBIT PARALLEL | |
| IC DRAM 256MBIT PAR 54VFBGA | |
| IC DRAM 256MBIT PAR 60FBGA | |
| IC DRAM 256MBIT PAR 84FBGA | |
| IC DRAM 256MBIT PARALLEL 60FBGA | |
| IC DRAM 256MBIT PARALLEL 66TSOP | |
| IC DRAM 256MBIT PARALLEL 84FBGA | |
| IC DRAM 2GBIT PAR 60FBGA | |
| IC DRAM 2GBIT PAR 63FBGA | |
| IC DRAM 2GBIT PAR 84FBGA | |
| IC DRAM 2GBIT PARALLEL 60FBGA | |
| IC DRAM 2GBIT PARALLEL 63FBGA | |
| IC DRAM 2GBIT PARALLEL 84FBGA | |
| IC DRAM 4GBIT PARALLEL 63FBGA | |
| IC DRAM 512MBIT PAR 54VFBGA | |
| IC DRAM 512MBIT PAR 60FBGA | |
| IC DRAM 512MBIT PAR 66TSOP | |
| IC DRAM 512MBIT PAR 84FBGA | |
| IC DRAM 512MBIT PAR 90VFBGA | |
| IC DRAM 512MBIT PAR 92FBGA | |
| IC DRAM 512MBIT PARALLEL 60FBGA | |
| IC DRAM 512MBIT PARALLEL 66TSOP | |
| IC DRAM 512MBIT PARALLEL 84FBGA | |
| IC DRAM 512MBIT PARALLEL | |
| IC DRAM 64MBIT PAR 54VFBGA | |
| IC DRAM 64MBIT PARALLEL 54VFBGA | |
| IC SDRAM 256MBIT 266MHZ 84FBGA |
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